Physics: Crystal Growth and Semiconductor Epitaxy

Education facts

Code: FYST71

<p>The aim of the course is to provide necessary knowledge to understand crystal growth and especially semiconductor epitaxy.</p><p>This course treats the fundamental aspects of crystal growth, e.g. the thermodynamic prerequisites for crystal growth such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, surface energies, surface diffusion, and Wulff’s theorem are studied.</p> <p>In the course section on epitaxial growth surface reconstructions, lattice mismatch, and dislocations, as well as characterization - both in- and ex-situ are discussed. Growth techniques and reactor models are also dealt with.</p> <p>During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.</p>

Entry requirements

Admission to the course requires 90 credits in scientific studies, or a bachelor's degree in physics, chemistry or equivalent - in both cases including a course that contains at least 2.5 credits thermodynamics. Furthermore is required English 6/B.

Education offerings

Each offering has its own dates and conditions. Closed offerings are retained as history and do not mean that a new application is open.

• Physics: Crystal Growth and Semiconductor Epitaxy

  Lund University

  Lund

  Start date: 18 January 2027

  End date: 28 March 2027

  Pace of study: 50 %